Optical properties of Si/Si0.87Ge0.13 multiple quantum well wires

Nanometer-scale wires cut into a Si/Si0.87Ge0.13 multiple quantum well structure were fabricated and characterized by using photoluminescence and photoreflectance at temperatures between 4 and 20 K. It was found that, in addition to a low-energy broadband emission at around 0.8 eV and other features normally observable in photoluminescence measurements, fabrication process induced strain relaxation and enhanced electron-hole droplets emission together with a new feature at 1.131 eV at 4 K were observed. The latter was further identified as a transition related to impurities located at the Si/Si0.87Ge0.13 heterointerfaces

Arguing Using Opponent Models

Peer reviewedPostprin

Degeneracy of Ground State in Two-dimensional Electron-Lattice System

We discuss the ground state of a two dimensional electron-lattice system described by a Su-Schrieffer-Heeger type Hamiltonian with a half-filled electronic band, for which it has been pointed out in the previous paper [J. Phys. Soc. Jpn. 69 (2000) 1769-1776] that the ground state distortion pattern is not unique in spite of a unique electronic energy spectrum and the same total energy. The necessary and sufficient conditions to be satisfied by the distortion patterns in the ground state are derived numerically. As a result the degrees of degeneracy in the ground state is estimated to be about $N^{N/4}$ for $N \gg 1$ with $N$ the linear dimension of the system.Comment: 2pages, 2figure